FDN86246

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

261m Ω @ 1.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 75V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Rise Time :

1.1ns

Series :

PowerTrench®

Power Dissipation :

1.5W

Radiation Hardening :

No

Weight :

30mg

Additional Feature :

ULTRA-LOW RESISTANCE

Continuous Drain Current (ID) :

1.6A

Number of Terminations :

3

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Published :

2010

Drain to Source Breakdown Voltage :

150V

Length :

1.4mm

Threshold Voltage :

3.4V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

2.9 ns

JESD-609 Code :

e3

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Nominal Vgs :

3.4 V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

8 ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Height :

940μm

Width :

2.92mm

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Feedback Cap-Max (Crss) :

5 pF

Pbfree Code :

yes

Turn On Delay Time :

4.5 ns

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation-Max :

1.5W Ta

Number of Elements :

1