FDN86501LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.5W Ta

Number of Elements :

1

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Weight :

30mg

Input Capacitance (Ciss) (Max) @ Vds :

335pF @ 30V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

HTS Code :

8541.29.00.95

Continuous Drain Current (ID) :

2.6A

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

116m Ω @ 2.6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V

Drain-source On Resistance-Max :

0.116Ohm

DS Breakdown Voltage-Min :

60V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Series :

PowerTrench®

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Pbfree Code :

yes

FET Type :

N-Channel

Number of Terminations :

3

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Terminal Position :

Dual

Feedback Cap-Max (Crss) :

10 pF

Mounting Type :

Surface Mount