FDMS3660S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Element Configuration :

Dual

Height :

1.1mm

FET Type :

2 N-Channel (Dual) Asymmetrical

Max Power Dissipation :

2.5W

Drain Current-Max (Abs) (ID) :

13A

Nominal Vgs :

1.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Turn-Off Delay Time :

19 ns

Continuous Drain Current (ID) :

30A

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

7.7 ns

Threshold Voltage :

1.5V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Surface Mount

Width :

5.9mm

Feedback Cap-Max (Crss) :

70 pF

FET Feature :

Logic Level Gate

Contact Plating :

Tin

JESD-30 Code :

R-PDSO-F6

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Pins :

8

Power Dissipation :

2.5W

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

ECCN Code :

EAR99

Published :

2009

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Base Part Number :

FDMS3660S

Weight :

171mg

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Factory Lead Time :

13 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1765pF @ 15V

Case Connection :

DRAIN SOURCE

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

30A 60A

Rds On (Max) @ Id, Vgs :

8m Ω @ 13A, 10V

Transistor Application :

SWITCHING

Package / Case :

8-PowerTDFN

Series :

PowerTrench®

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Power - Max :

1W

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE