FDMS3606S

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

3.4 ns

Number of Elements :

2

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Height :

1mm

JESD-30 Code :

R-PDSO-F6

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

36 ns

Turn On Delay Time :

15 ns

Weight :

171mg

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Pins :

8

Rise Time :

5.5ns

Series :

PowerTrench®

Number of Terminations :

6

Max Power Dissipation :

1W

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

1785pF @ 15V

Rds On (Max) @ Id, Vgs :

8m Ω @ 13A, 10V

Case Connection :

DRAIN SOURCE

Continuous Drain Current (ID) :

27A

Drain Current-Max (Abs) (ID) :

13A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A 27A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5mm

Length :

6mm

FET Type :

2 N-Channel (Dual) Asymmetrical

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Channels :

2

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Reach Compliance Code :

not_compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V