FDMS3606S
- Mfr.Part #
- FDMS3606S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 44,185
- In Stock :
- 44,185
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Length :
- 6mm
- Number of Elements :
- 2
- Turn On Delay Time :
- 15 ns
- Reach Compliance Code :
- not_compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 13A
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Rise Time :
- 5.5ns
- Factory Lead Time :
- 13 Weeks
- Vgs(th) (Max) @ Id :
- 2.7V @ 250μA
- JESD-30 Code :
- R-PDSO-F6
- Continuous Drain Current (ID) :
- 27A
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 13A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Feature :
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds :
- 1785pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 13A 27A
- Package / Case :
- 8-PowerTDFN
- Number of Channels :
- 2
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 36 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 5mm
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN SOURCE
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 6
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 3.4 ns
- Mounting Type :
- Surface Mount
- Weight :
- 171mg
- Height :
- 1mm
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDMS3606S
FDMS3606S Documents

FDMS3606S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMS3606S Description
The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.
FDMS3606S Features
Q1: N-Channel
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A
Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDMS3606S Applications
Notebook PC
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