FDMS3604AS

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Package / Case :

8-PowerTDFN

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-N6

RoHS Status :

RoHS Compliant

Nominal Vgs :

2 V

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

13A 23A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Series :

PowerTrench®

Case Connection :

DRAIN SOURCE

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual) Asymmetrical

Mount :

Surface Mount

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Terminations :

6

Height :

1.05mm

Rise Time :

4.8ns

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

75 pF

Fall Time (Typ) :

3.4 ns

Continuous Drain Current (ID) :

23A

Input Capacitance (Ciss) (Max) @ Vds :

1695pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

Length :

5mm

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

8m Ω @ 13A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

31 ns

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

13A

REACH SVHC :

No SVHC

Max Power Dissipation :

1W

Number of Elements :

2

Width :

6mm