FDMC89521L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

PowerTrench®

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Continuous Drain Current (ID) :

8.2A

Max Power Dissipation :

800mW

Height :

800μm

Mounting Type :

Surface Mount

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Power Dissipation :

1.9W

Number of Channels :

2

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Resistance :

17mOhm

Turn On Delay Time :

7.9 ns

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Junction Temperature (Tj) :

150°C

Additional Feature :

AVALANCHE ENERGY RATED

Factory Lead Time :

6 Weeks

JESD-609 Code :

e4

Package / Case :

8-PowerWDFN

Lead Free :

Lead Free

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rise Time :

2.1ns

Turn-Off Delay Time :

18 ns

Pbfree Code :

yes

Element Configuration :

Dual

Length :

3mm

Width :

3mm

Rds On (Max) @ Id, Vgs :

17m Ω @ 8.2A, 10V

Published :

2010

Feedback Cap-Max (Crss) :

15 pF

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1635pF @ 30V

Fall Time (Typ) :

1.7 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Terminations :

8

Number of Elements :

2

JESD-30 Code :

S-PDSO-N4

Vgs(th) (Max) @ Id :

3V @ 250µA

Weight :

196mg

Gate to Source Voltage (Vgs) :

20V

Power - Max :

1.9W Ta 16W Tc

Number of Pins :

8

FET Feature :

Logic Level Gate