FDMC8200S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

Resistance :

20mOhm

Factory Lead Time :

23 Weeks

Power - Max :

700mW 1W

Length :

3mm

Width :

3mm

Power Dissipation :

2.5W

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Max Power Dissipation :

1W

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Series :

PowerTrench®

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

20m Ω @ 6A, 10V

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Height :

750μm

Feedback Cap-Max (Crss) :

30 pF

Weight :

186mg

Number of Elements :

2

Turn-Off Delay Time :

35 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

DRAIN SOURCE

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Lead Free :

Lead Free

ECCN Code :

EAR99

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Package / Case :

8-PowerWDFN

Vgs(th) (Max) @ Id :

3V @ 250µA

Nominal Vgs :

2.3 V

Continuous Drain Current (ID) :

18A

Transistor Element Material :

SILICON

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

6A

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

6A 8.5A

Number of Terminations :

8

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

JESD-609 Code :

e4