FDMC8200

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Height :

750μm

Mount :

Surface Mount

Feedback Cap-Max (Crss) :

30 pF

Operating Mode :

ENHANCEMENT MODE

Power - Max :

700mW 900mW

Nominal Vgs :

2.3 V

Pulsed Drain Current-Max (IDM) :

40A

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Turn On Time-Max (ton) :

30ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerWDFN

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Fall Time (Typ) :

6 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

38 ns

Threshold Voltage :

2.3V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

8A 12A

Number of Terminations :

8

Resistance :

20mOhm

Number of Elements :

2

Factory Lead Time :

23 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Continuous Drain Current (ID) :

8A

Transistor Application :

SWITCHING

Weight :

186mg

Rds On (Max) @ Id, Vgs :

20m Ω @ 6A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Dual

Length :

3mm

Drain to Source Breakdown Voltage :

30V

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Power Dissipation :

2.2W

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Contact Plating :

Gold

Rise Time :

4ns

FET Feature :

Logic Level Gate

Case Connection :

DRAIN-SOURCE

Series :

PowerTrench®

Max Power Dissipation :

900mW

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3mm

RoHS Status :

ROHS3 Compliant