FDMC7208S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

23 Weeks

Max Power Dissipation :

800mW

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Turn On Delay Time :

7 ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 15V

Package / Case :

8-PowerWDFN

Case Connection :

DRAIN

JESD-609 Code :

e4

Length :

3mm

Published :

2010

Number of Pins :

8

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

12A

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Turn-Off Delay Time :

23 ns

Fall Time (Typ) :

2 ns

Continuous Drain Current (ID) :

16A

Width :

3mm

Mount :

Surface Mount

Element Configuration :

Dual

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

9m Ω @ 12A, 10V

Current - Continuous Drain (Id) @ 25°C :

12A 16A

Power Dissipation :

1.9W

FET Feature :

Logic Level Gate

Weight :

196mg

Drain-source On Resistance-Max :

0.009Ohm

Feedback Cap-Max (Crss) :

55 pF

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Height :

750μm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

S-PDSO-N4

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON