FDMC7200S
- Mfr.Part #
- FDMC7200S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 5,956
- In Stock :
- 5,956
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Factory Lead Time :
- 23 Weeks
- Case Connection :
- DRAIN SOURCE
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- FET Type :
- 2 N-Channel (Dual)
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 8-PowerWDFN
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Channels :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power - Max :
- 700mW 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Feedback Cap-Max (Crss) :
- 30 pF
- Drain to Source Voltage (Vdss) :
- 30V
- Terminal Form :
- NO LEAD
- Weight :
- 186mg
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e4
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 6A, 10V
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 13A
- Drain Current-Max (Abs) (ID) :
- 7A
- Current - Continuous Drain (Id) @ 25°C :
- 7A 13A
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- DS Breakdown Voltage-Min :
- 30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- ECCN Code :
- EAR99
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 15V
- Max Power Dissipation :
- 1W
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- Logic Level Gate
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDMC7200S
FDMC7200S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMC7200S Description
The device includes two dedicated N-channel MOSFET with a package power of 33 (3 Mm X 3 Mm MLP). The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous MOSFET (Q2) are designed to provide optimal power efficiency.
FDMC7200S Features
Q1: N-Channel
Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A
Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel
Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A
RoHS Compliant
FDMC7200S Applications
Notebook PC
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