FDMC6890NZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Current Rating :

4A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Fall Time (Typ) :

12 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Power - Max :

1.92W 1.78W

Turn On Delay Time :

4 ns

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Drain-source On Resistance-Max :

0.15Ohm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e4

Power Dissipation :

1.92W

Factory Lead Time :

16 Weeks

Rise Time :

12ns

FET Type :

2 N-Channel (Dual)

Series :

PowerTrench®

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

20V

Drain to Source Breakdown Voltage :

20V

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Width :

3mm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

7 ns

Transistor Element Material :

SILICON

Package / Case :

6-WDFN Exposed Pad

Length :

3mm

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

68m Ω @ 4A, 4.5V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

4A

Drain Current-Max (Abs) (ID) :

4A

Element Configuration :

Dual

Lead Free :

Lead Free

Weight :

165.33333mg

Mount :

Surface Mount

Number of Pins :

6

Number of Elements :

2

Max Power Dissipation :

1.92W

Height :

750μm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Pulsed Drain Current-Max (IDM) :

10A