FDMC6890NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

10A

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

4A

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2V @ 250μA

Length :

3mm

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

4A

FET Feature :

Logic Level Gate

Height :

750μm

Series :

PowerTrench®

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

6

Element Configuration :

Dual

Power - Max :

1.92W 1.78W

Power Dissipation :

1.92W

Max Power Dissipation :

1.92W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Width :

3mm

Fall Time (Typ) :

12 ns

Weight :

165.33333mg

Rise Time :

12ns

Mount :

Surface Mount

Turn-Off Delay Time :

7 ns

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Turn On Delay Time :

4 ns

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

20V

Drain-source On Resistance-Max :

0.15Ohm

ECCN Code :

EAR99

JESD-609 Code :

e4

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Current Rating :

4A

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

6-WDFN Exposed Pad

Rds On (Max) @ Id, Vgs :

68m Ω @ 4A, 4.5V