FDM3300NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

23m Ω @ 10A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

FET Feature :

Logic Level Gate

DS Breakdown Voltage-Min :

20V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain-source On Resistance-Max :

0.023Ohm

Drain Current-Max (Abs) (ID) :

10A

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

10A

Transistor Application :

SWITCHING

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 10V

Surface Mount :

yes

Number of Elements :

2

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Power - Max :

900mW

FET Type :

2 N-Channel (Dual)

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Series :

PowerTrench®

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

NOT SPECIFIED

Pin Count :

8