FDM3622
- Mfr.Part #
- FDM3622
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 2,769
- In Stock :
- 2,769
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 25ns
- Current Rating :
- 4.4A
- JESD-30 Code :
- S-PDSO-F5
- Turn-Off Delay Time :
- 35 ns
- Height :
- 950μm
- Threshold Voltage :
- 4V
- Weight :
- 210mg
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Ta
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 4.4A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2mm
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 4.4A, 10V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Length :
- 3mm
- Power Dissipation :
- 2.1W
- Turn On Delay Time :
- 11 ns
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090pF @ 25V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 100V
- Series :
- PowerTrench®
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Number of Terminations :
- 5
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 26 ns
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Package / Case :
- 8-PowerWDFN
- Factory Lead Time :
- 10 Weeks
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.06Ohm
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2.1W Ta
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 100V
- Datasheets
- FDM3622
FDM3622 Documents
N-Channel Tape & Reel (TR) 60m Ω @ 4.4A, 10V ±20V 1090pF @ 25V 17nC @ 10V 8-PowerWDFN
FDM3622 Description
FDM3622 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
FDM3622 Features
-
Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A
-
Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A
-
Low Miller Charge
-
Low QRR Body Diode
-
Optimized efficiency at high frequencies
-
UIS Capability (Single Pulse and Repetitive PulseFormerly developmental type 82744
-
RoHS Compliant
FDM3622 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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