FDM3622

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Mfr.Part #
FDM3622
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 100V 4.4A 8MLP
Stock
2,769
In Stock :
2,769

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
2.1W
Element Configuration :
Single
Fall Time (Typ) :
26 ns
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Threshold Voltage :
4V
Transistor Application :
SWITCHING
Current Rating :
4.4A
JESD-30 Code :
S-PDSO-F5
Terminal Finish :
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Number of Pins :
8
Mounting Type :
Surface Mount
Factory Lead Time :
10 Weeks
Current - Continuous Drain (Id) @ 25°C :
4.4A Ta
Turn On Delay Time :
11 ns
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Series :
PowerTrench®
Input Capacitance (Ciss) (Max) @ Vds :
1090pF @ 25V
Power Dissipation-Max :
2.1W Ta
FET Type :
N-Channel
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Weight :
210mg
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Lead Free :
Lead Free
Width :
2mm
Drain-source On Resistance-Max :
0.06Ohm
Terminal Form :
Flat
Length :
3mm
JESD-609 Code :
e4
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
100V
Voltage - Rated DC :
100V
Contact Plating :
Tin
ECCN Code :
EAR99
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
60m Ω @ 4.4A, 10V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Continuous Drain Current (ID) :
4.4A
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
950μm
Package / Case :
8-PowerWDFN
Number of Terminations :
5
Operating Temperature :
-55°C~150°C TJ
Rise Time :
25ns
Turn-Off Delay Time :
35 ns
Datasheets
FDM3622
Introducing Transistors - FETs, MOSFETs - Single onsemi FDM3622 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, FDM3622 pinout, FDM3622 datasheet PDF, FDM3622 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDM3622 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDM3622


N-Channel Tape & Reel (TR) 60m Ω @ 4.4A, 10V ±20V 1090pF @ 25V 17nC @ 10V 8-PowerWDFN

FDM3622 Description


FDM3622 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.



FDM3622 Features


  • Max rDS(on) = 60mΩ at VGS = 10V, ID = 4.4A

  • Max rDS(on) = 80mΩ at VGS = 6.0V, ID = 3.8A

  • Low Miller Charge

  • Low QRR Body Diode

  • Optimized efficiency at high frequencies

  • UIS Capability (Single Pulse and Repetitive PulseFormerly developmental type 82744

  • RoHS Compliant



FDM3622 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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