FDFS6N754
- Mfr.Part #
- FDFS6N754
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 4A 8SOIC
- Stock
- 38,859
- In Stock :
- 38,859
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- Number of Elements :
- 1
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Current Rating :
- 4A
- Fall Time (Typ) :
- 2 ns
- Width :
- 4mm
- Dual Supply Voltage :
- 30V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Terminations :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 4A
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 1.6W Ta
- Turn-Off Delay Time :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Threshold Voltage :
- 1.7V
- Resistance :
- 56mOhm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Nominal Vgs :
- 1.7 V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 299pF @ 15V
- Drain Current-Max (Abs) (ID) :
- 4A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Weight :
- 230.4mg
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 20A
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Length :
- 5mm
- Turn On Delay Time :
- 6 ns
- Rise Time :
- 8ns
- Terminal Position :
- Dual
- Height :
- 1.5mm
- Number of Pins :
- 8
- FET Feature :
- Schottky Diode (Isolated)
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 4A, 10V
- Datasheets
- FDFS6N754

N-Channel Tape & Reel (TR) 56m Ω @ 4A, 10V ±20V 299pF @ 15V 6nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDFS6N754 Description
The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
FDFS6N754 Features
Max rDS(on) = 56m|? at VGS = 0V, ID= 4A
Max rDS(on) = 75m|? at VGS= 4.5V, ID = 3.5A
VF 0.45V @ 2A
VF 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout for design flexibility
Low Gate Charge (Qg = 4nC)
Low Miller Charge
FDFS6N754 Applications
Inverter
Synchronous Rectifier
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