FDFS2P106A
- Mfr.Part #
- FDFS2P106A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 3A 8SOIC
- Stock
- 29,795
- In Stock :
- 29,795
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 900mW Ta
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Factory Lead Time :
- 7 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Continuous Drain Current (ID) :
- -3A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 714pF @ 30V
- Voltage - Rated DC :
- -60V
- Current Rating :
- -3A
- Transistor Application :
- SWITCHING
- Rise Time :
- 11ns
- FET Feature :
- Schottky Diode (Isolated)
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 60V
- Weight :
- 230.4mg
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Fall Time (Typ) :
- 8.5 ns
- Series :
- PowerTrench®
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Power Dissipation :
- 2W
- Element Configuration :
- Single
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 3A, 10V
- Drain Current-Max (Abs) (ID) :
- 3A
- Turn-Off Delay Time :
- 28 ns
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- -60V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Turn On Delay Time :
- 8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Datasheets
- FDFS2P106A

P-Channel Tape & Reel (TR) 110m Ω @ 3A, 10V ±20V 714pF @ 30V 21nC @ 10V 60V 8-SOIC (0.154, 3.90mm Width)
FDFS2P106A Description
The FDFS2P106A combines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
FDFS2P106A Features
-
–3.0 A, –60V
-
VF < 0.45 V @ 1 A (TJ = 125°C)
-
Schottky and MOSFET incorporated into single power surface mount SO-8 package
-
Electrically independent Schottky and MOSFET pinout for design flexibility
FDFS2P106A Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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