FDFS2P753Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

Schottky Diode (Isolated)

Element Configuration :

Single

Power Dissipation-Max :

1.6W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

25V

Drain Current-Max (Abs) (ID) :

3A

Lifecycle Status :

CONSULT SALES OFFICE (Last Updated: 2 days ago)

Length :

4.9mm

REACH SVHC :

No SVHC

Voltage - Rated DC :

-30V

Number of Pins :

8

Forward Current :

2mA

ECCN Code :

EAR99

Turn-Off Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-30V

Avalanche Energy Rating (Eas) :

6 mJ

Power Dissipation :

1.6mW

Published :

2017

Lead Free :

Lead Free

Height :

1.575mm

Radiation Hardening :

No

Width :

3.9mm

Current Rating :

-3A

Series :

PowerTrench®

Terminal Position :

Dual

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

-2.1V

Continuous Drain Current (ID) :

3A

Resistance :

115mOhm

Weight :

230.4mg

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Turn On Delay Time :

7 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

115m Ω @ 3A, 10V

Rise Time :

31ns

Fall Time (Typ) :

31 ns

Factory Lead Time :

27 Weeks

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Number of Elements :

1

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount