FDFS2P753Z
- Mfr.Part #
- FDFS2P753Z
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 3A 8SOIC
- Stock
- 46,085
- In Stock :
- 46,085
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 18 ns
- Mounting Type :
- Surface Mount
- Weight :
- 230.4mg
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Avalanche Energy Rating (Eas) :
- 6 mJ
- Threshold Voltage :
- -2.1V
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 2 days ago)
- Power Dissipation-Max :
- 1.6W Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- -3A
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 4.9mm
- Height :
- 1.575mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 3A
- Number of Terminations :
- 8
- Published :
- 2017
- Forward Current :
- 2mA
- Factory Lead Time :
- 27 Weeks
- Vgs (Max) :
- ±25V
- Voltage - Rated DC :
- -30V
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- -30V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Rise Time :
- 31ns
- Number of Elements :
- 1
- Fall Time (Typ) :
- 31 ns
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 115m Ω @ 3A, 10V
- Width :
- 3.9mm
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Schottky Diode (Isolated)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 455pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Turn On Delay Time :
- 7 ns
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 3A
- Resistance :
- 115mOhm
- Power Dissipation :
- 1.6mW
- Mount :
- Surface Mount
- Datasheets
- FDFS2P753Z
FDFS2P753Z Documents

P-Channel Tape & Reel (TR) 115m Ω @ 3A, 10V ±25V 455pF @ 10V 9.3nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDFS2P753Z Description
The FDFS2P753Z is an integrated P-channel MOSFET and Schottky Diode that combines the exceptional performance of Fairchild's PowerTrench? technology with a very low forward voltage drop Schottky barrier rectifier. It is designed specifically as a single package solution for DC to DC converters. The onsemi FDFS2P753Z features a fast switching, low gate charge MOSFET with very low ON-state resistance. The independently connected Schottky diode allows its use in a variety of DC-to-DC converter topologies.
FDFS2P753Z Features
-
Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A
-
Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A
-
VF < 500mV @ 1A
-
VF < 580mV @ 2A
-
Schottky and MOSFET incorporated into single power surface mount S0-8 package
-
Electrically independent Schottky and MOSFET pinout for design flexibility
FDFS2P753Z Applications
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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