FDFS2P102

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3.3A Ta

FET Feature :

Schottky Diode (Isolated)

Power Dissipation-Max :

900mW Ta

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

125m Ω @ 3.3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Number of Terminations :

8

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

3.3A

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.125Ohm

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

JESD-30 Code :

R-PDSO-G8

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

20A

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Surface Mount :

yes

Pin Count :

8

Pbfree Code :

yes

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE