FDFS6N303

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

900mW Ta

FET Feature :

Schottky Diode (Isolated)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

30A

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Pin Count :

8

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

35m Ω @ 6A, 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.035Ohm

Pbfree Code :

yes

Surface Mount :

yes

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Number of Terminations :

8