FDD8N50NZTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

90W

Height :

2.39mm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.85Ohm

JESD-609 Code :

e3

Turn-Off Delay Time :

43 ns

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

735pF @ 25V

Power Dissipation-Max :

90W Tc

Radiation Hardening :

No

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Width :

6.22mm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

26A

DS Breakdown Voltage-Min :

500V

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Rise Time :

34ns

Continuous Drain Current (ID) :

6.5A

JESD-30 Code :

R-PSSO-G2

Weight :

260.37mg

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.73mm

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

Series :

UniFET-II™

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Published :

2004

Fall Time (Typ) :

27 ns

Avalanche Energy Rating (Eas) :

287 mJ

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.25A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Additional Feature :

ESD PROTECTED

Number of Pins :

3

Gate to Source Voltage (Vgs) :

25V

Drain to Source Voltage (Vdss) :

500V

Turn On Delay Time :

17 ns

Pbfree Code :

yes

Transistor Element Material :

SILICON