FDD8444L

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Mfr.Part #
FDD8444L
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 40V 16A/50A TO252AA
Stock
10,538
In Stock :
10,538

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
3V @ 250µA
Surface Mount :
yes
Pbfree Code :
yes
Terminal Form :
Gull wing
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
16A Ta 50A Tc
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Position :
Single
Pin Count :
3
Qualification Status :
COMMERCIAL
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
5.2m Ω @ 50A, 10V
Drain-source On Resistance-Max :
0.0107ohm
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
16A
Power Dissipation-Max :
153W Tc
Terminal Finish :
MATTE TIN
Series :
PowerTrench®
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
40V
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
5.53pF @ 25V
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
40V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 5V
Number of Terminations :
2
Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Avalanche Energy Rating (Eas) :
295 mJ
JEDEC-95 Code :
TO-252AA
Datasheets
FDD8444L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD8444L from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, FDD8444L pinout, FDD8444L datasheet PDF, FDD8444L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD8444L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD8444L


N-Channel Tape & Reel (TR) 5.2m Ω @ 50A, 10V ±20V 5.53pF @ 25V 60nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD8444L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 295 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5.53pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 16A.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

FDD8444L Features


the avalanche energy rating (Eas) is 295 mJ
a 40V drain to source voltage (Vdss)


FDD8444L Applications


There are a lot of Rochester Electronics, LLC
FDD8444L applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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