FDD8424H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

4

Threshold Voltage :

1.7V

Base Part Number :

FDD8424

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

24m Ω @ 9A, 10V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

9A

Max Power Dissipation :

3.1W

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G4

Turn-Off Delay Time :

20 ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Number of Channels :

2

Rise Time :

3ns

Terminal Form :

Gull wing

Fall Time (Typ) :

3 ns

Radiation Hardening :

No

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2014

Case Connection :

DRAIN

Resistance :

24mOhm

Weight :

260.37mg

Power Dissipation :

3.1W

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Factory Lead Time :

17 Weeks

Length :

6.73mm

JESD-609 Code :

e3

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

20V

Width :

6.22mm

Height :

2.517mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Number of Pins :

5

Series :

PowerTrench®

Number of Elements :

2

Power - Max :

1.3W

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

9A

Mounting Type :

Surface Mount

Pbfree Code :

yes

Turn On Delay Time :

7 ns

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9A 6.5A

Drain to Source Breakdown Voltage :

40V

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 20V