FDD8444L
- Mfr.Part #
- FDD8444L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 16A/50A TO252AA
- Stock
- 17,712
- In Stock :
- 17,712
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.53pF @ 25V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 50A, 10V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain Current-Max (Abs) (ID) :
- 16A
- Terminal Form :
- Gull wing
- DS Breakdown Voltage-Min :
- 40V
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 295 mJ
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Power Dissipation-Max :
- 153W Tc
- Pbfree Code :
- yes
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 50A Tc
- Drain-source On Resistance-Max :
- 0.0107ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 5V
- Series :
- PowerTrench®
- Datasheets
- FDD8444L
FDD8444L Documents

N-Channel Tape & Reel (TR) 5.2m Ω @ 50A, 10V ±20V 5.53pF @ 25V 60nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8444L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 295 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5.53pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 16A.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDD8444L Features
the avalanche energy rating (Eas) is 295 mJ
a 40V drain to source voltage (Vdss)
FDD8444L Applications
There are a lot of Rochester Electronics, LLC
FDD8444L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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