FDD8444L
- Mfr.Part #
- FDD8444L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 16A/50A TO252AA
- Stock
- 17,712
- In Stock :
- 17,712
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Series :
- PowerTrench®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Voltage (Vdss) :
- 40V
- Surface Mount :
- yes
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 40V
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.53pF @ 25V
- JEDEC-95 Code :
- TO-252AA
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Power Dissipation-Max :
- 153W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- MATTE TIN
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 50A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 5V
- Drain-source On Resistance-Max :
- 0.0107ohm
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 50A, 10V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Configuration :
- Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 295 mJ
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 16A
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDD8444L
FDD8444L Documents

N-Channel Tape & Reel (TR) 5.2m Ω @ 50A, 10V ±20V 5.53pF @ 25V 60nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8444L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 295 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5.53pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 16A.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDD8444L Features
the avalanche energy rating (Eas) is 295 mJ
a 40V drain to source voltage (Vdss)
FDD8444L Applications
There are a lot of Rochester Electronics, LLC
FDD8444L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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