FDD8882

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

260.37mg

Radiation Hardening :

No

Element Configuration :

Single

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Factory Lead Time :

10 Weeks

Lead Free :

Lead Free

Number of Pins :

3

Length :

6.73mm

FET Type :

N-Channel

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

55A

Mount :

Surface Mount

Contact Plating :

Tin

ECCN Code :

EAR99

Turn On Delay Time :

8 ns

Power Dissipation :

55W

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 15V

Published :

2004

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Drain to Source Breakdown Voltage :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

40 ns

Width :

6.22mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Voltage - Rated DC :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

12.6A Ta 55A Tc

Current Rating :

55A

Height :

2.39mm

Number of Terminations :

2

Pbfree Code :

yes

Case Connection :

DRAIN

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 35A, 10V

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

55W Tc

Rise Time :

82ns