FDD8882

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Voltage - Rated DC :

30V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Width :

6.22mm

Fall Time (Typ) :

25 ns

Contact Plating :

Tin

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 15V

Weight :

260.37mg

Length :

6.73mm

Radiation Hardening :

No

Published :

2004

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

55W Tc

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Turn On Delay Time :

8 ns

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

40 ns

Series :

PowerTrench®

JEDEC-95 Code :

TO-252AA

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

55W

Rise Time :

82ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 35A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.39mm

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Current Rating :

55A

Current - Continuous Drain (Id) @ 25°C :

12.6A Ta 55A Tc

Continuous Drain Current (ID) :

55A

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Element Configuration :

Single

JESD-609 Code :

e3

Number of Terminations :

2

FET Type :

N-Channel

Transistor Element Material :

SILICON