FDD8880

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 15V

Power Dissipation :

55W

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Width :

6.22mm

Case Connection :

DRAIN

Series :

PowerTrench®

Continuous Drain Current (ID) :

58A

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

8 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

Current Rating :

58A

Current - Continuous Drain (Id) @ 25°C :

13A Ta 58A Tc

Height :

2.39mm

Turn-Off Delay Time :

38 ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

55W Tc

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

91ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Length :

6.73mm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Vgs (Max) :

±20V

JESD-609 Code :

e3

Resistance :

9mOhm

Factory Lead Time :

10 Weeks

Weight :

260.37mg

FET Type :

N-Channel

Fall Time (Typ) :

32 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 35A, 10V

Published :

2004

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

30V

Threshold Voltage :

2.5V

Pbfree Code :

yes