FDD8880

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Continuous Drain Current (ID) :

58A

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

32 ns

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

13A Ta 58A Tc

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Published :

2004

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Width :

6.22mm

Element Configuration :

Single

Voltage - Rated DC :

30V

Number of Pins :

3

Factory Lead Time :

10 Weeks

Series :

PowerTrench®

Turn-Off Delay Time :

38 ns

Number of Terminations :

2

Resistance :

9mOhm

Weight :

260.37mg

Mounting Type :

Surface Mount

Current Rating :

58A

Turn On Delay Time :

8 ns

Terminal Form :

Gull wing

Length :

6.73mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9m Ω @ 35A, 10V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Height :

2.39mm

ECCN Code :

EAR99

Rise Time :

91ns

Threshold Voltage :

2.5V

Mount :

Surface Mount

Contact Plating :

Tin

Pbfree Code :

yes

Power Dissipation-Max :

55W Tc

Radiation Hardening :

No

Lead Free :

Lead Free

Power Dissipation :

55W

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 15V