FDD8870-F085
- Mfr.Part #
- FDD8870-F085
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- FDD8870 - N-CHANNEL POWERTRENCH
- Stock
- 13,460
- In Stock :
- 13,460
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Weight :
- 260.37mg
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 35A, 10V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 42 ns
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation-Max :
- 160W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 9 ns
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5160pF @ 15V
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Power Dissipation :
- 160W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Rise Time :
- 83ns
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 21A
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Turn-Off Delay Time :
- 83 ns
- JESD-30 Code :
- R-PSSO-G2
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- FET Type :
- N-Channel
- Datasheets
- FDD8870-F085

N-Channel Tape & Reel (TR) 3.9m Ω @ 35A, 10V ±20V 5160pF @ 15V 118nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8870-F085 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.A device's maximum input capacitance is 5160pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 83 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDD8870-F085 Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 83 ns
FDD8870-F085 Applications
There are a lot of ON Semiconductor
FDD8870-F085 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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