FDD8870-F085
- Mfr.Part #
- FDD8870-F085
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- FDD8870 - N-CHANNEL POWERTRENCH
- Stock
- 13,460
- In Stock :
- 13,460
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 42 ns
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 30V
- Weight :
- 260.37mg
- Rise Time :
- 83ns
- Power Dissipation :
- 160W
- Continuous Drain Current (ID) :
- 21A
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 9 ns
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5160pF @ 15V
- JEDEC-95 Code :
- TO-252AA
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 35A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Power Dissipation-Max :
- 160W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 83 ns
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- FDD8870-F085
FDD8870-F085 Documents

N-Channel Tape & Reel (TR) 3.9m Ω @ 35A, 10V ±20V 5160pF @ 15V 118nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8870-F085 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.A device's maximum input capacitance is 5160pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 83 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
FDD8870-F085 Features
the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 83 ns
FDD8870-F085 Applications
There are a lot of ON Semiconductor
FDD8870-F085 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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