FDD8870

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

690 mJ

Threshold Voltage :

2.5V

JEDEC-95 Code :

TO-252AA

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Turn-Off Delay Time :

83 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Transistor Element Material :

SILICON

Weight :

260.37mg

Vgs (Max) :

±20V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 35A, 10V

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Channels :

1

Fall Time (Typ) :

42 ns

JESD-30 Code :

R-PSSO-G2

Series :

PowerTrench®

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

21A Ta 160A Tc

Power Dissipation :

160W

Number of Terminations :

2

Rise Time :

83ns

Input Capacitance (Ciss) (Max) @ Vds :

5160pF @ 15V

REACH SVHC :

No SVHC

Length :

6.73mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

N-Channel

Case Connection :

DRAIN

Height :

2.517mm

Published :

2004

Pbfree Code :

yes

Power Dissipation-Max :

160W Tc

Turn On Delay Time :

9 ns

Current Rating :

160A

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

160A

Width :

6.22mm

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

175°C

Radiation Hardening :

No

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Resistance :

4.4mOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1