FDD8782

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

50W

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Current Rating :

35A

Rise Time :

9ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Terminal Form :

Gull wing

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

11m Ω @ 35A, 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Element Configuration :

Single

Number of Elements :

1

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 13V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

70 mJ

Fall Time (Typ) :

14 ns

Additional Feature :

AVALANCHE RATED

Weight :

260.37mg

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Factory Lead Time :

10 Weeks

Voltage - Rated DC :

25V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Continuous Drain Current (ID) :

35A

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Lead Free :

Lead Free

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Turn On Delay Time :

7 ns

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

50W Tc

Turn-Off Delay Time :

22 ns

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)