FDD8780
- Mfr.Part #
- FDD8780
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 81,072
- In Stock :
- 81,072
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pulsed Drain Current-Max (IDM) :
- 224A
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 35A, 10V
- Resistance :
- 8.5mOhm
- Drain Current-Max (Abs) (ID) :
- 60A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 50W
- Length :
- 6.73mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Width :
- 6.22mm
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Power Dissipation-Max :
- 50W Tc
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 260.37mg
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 1440pF @ 13V
- FET Type :
- N-Channel
- Threshold Voltage :
- 1.8V
- Fall Time (Typ) :
- 24 ns
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 43 ns
- Drain to Source Breakdown Voltage :
- 25V
- Published :
- 2006
- Number of Pins :
- 3
- Height :
- 2.39mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- Voltage - Rated DC :
- 25V
- Rise Time :
- 9ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-252AA
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 35A
- Vgs (Max) :
- ±20V
- Current Rating :
- 35A
- Turn On Delay Time :
- 7 ns
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Pbfree Code :
- yes
- Datasheets
- FDD8780
FDD8780 Documents

N-Channel Tape & Reel (TR) 8.5m Ω @ 35A, 10V ±20V 1440pF @ 13V 29nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8780 Description
FDD8780 N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDD8780 ON Semiconductor can remove additional component and improve system reliability in certain applications that require performance improvement of the body diode. FDD8780 MOSFET is used in Primary DC-DC MOSFET, Synchronous Rectifier, Load Switch.
FDD8780 Features
RoHS Compliant
MSL1 robust package
Silicon combination
Advanced Package
100% UIL tested
FDD8780 Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
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