FDD8780
- Mfr.Part #
- FDD8780
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 81,072
- In Stock :
- 81,072
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 50W Tc
- Terminal Finish :
- Tin (Sn)
- Height :
- 2.39mm
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®
- Mount :
- Surface Mount
- Width :
- 6.22mm
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 43 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-252AA
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Breakdown Voltage :
- 25V
- Length :
- 6.73mm
- Weight :
- 260.37mg
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 24 ns
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Resistance :
- 8.5mOhm
- Number of Terminations :
- 2
- Published :
- 2006
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 35A, 10V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 25V
- Power Dissipation :
- 50W
- Continuous Drain Current (ID) :
- 35A
- Current Rating :
- 35A
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Threshold Voltage :
- 1.8V
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Rise Time :
- 9ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1440pF @ 13V
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 224A
- Drain Current-Max (Abs) (ID) :
- 60A
- Turn On Delay Time :
- 7 ns
- Datasheets
- FDD8780

N-Channel Tape & Reel (TR) 8.5m Ω @ 35A, 10V ±20V 1440pF @ 13V 29nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8780 Description
FDD8780 N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDD8780 ON Semiconductor can remove additional component and improve system reliability in certain applications that require performance improvement of the body diode. FDD8780 MOSFET is used in Primary DC-DC MOSFET, Synchronous Rectifier, Load Switch.
FDD8780 Features
RoHS Compliant
MSL1 robust package
Silicon combination
Advanced Package
100% UIL tested
FDD8780 Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
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