FDD8778

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

39W

Threshold Voltage :

1.5V

Time@Peak Reflow Temperature-Max (s) :

30

Height :

2.39mm

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Voltage - Rated DC :

25V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

22ns

JEDEC-95 Code :

TO-252AA

Nominal Vgs :

1.5 V

Power Dissipation-Max :

39W Tc

Width :

6.22mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

845pF @ 13V

Radiation Hardening :

No

Terminal Form :

Gull wing

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Published :

2006

Drain to Source Breakdown Voltage :

25V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Pbfree Code :

yes

Turn On Delay Time :

6 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

260.37mg

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

35A

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

24 mJ

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

14m Ω @ 35A, 10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Resistance :

14mOhm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

35A

Fall Time (Typ) :

32 ns

Length :

6.73mm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

43 ns