FDD8770

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

25V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

25V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Series :

PowerTrench®

Number of Terminations :

2

Power Dissipation-Max :

115W Tc

JESD-609 Code :

e3

Number of Elements :

1

Mount :

Surface Mount

Height :

6.35mm

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

35A

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4m Ω @ 35A, 10V

Pulsed Drain Current-Max (IDM) :

407A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Nominal Vgs :

1.6 V

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Rise Time :

12ns

Pbfree Code :

yes

Length :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 13V

Power Dissipation :

115W

Current Rating :

35A

Factory Lead Time :

10 Weeks

Width :

6.35mm

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Weight :

260.37mg

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-252AA

Resistance :

4mOhm

Fall Time (Typ) :

25 ns

Case Connection :

DRAIN

Turn-Off Delay Time :

49 ns

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Threshold Voltage :

1.6V

Terminal Form :

Gull wing

Turn On Delay Time :

10 ns

Element Configuration :

Single