FDD8750

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

25V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.7W Ta 18W Tc

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

19 mJ

Pulsed Drain Current-Max (IDM) :

14A

Drain to Source Voltage (Vdss) :

25V

FET Type :

N-Channel

Drain-source On Resistance-Max :

63Ohm

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

425pF @ 13V

Pin Count :

3

Series :

PowerTrench®

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

40m Ω @ 2.7A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta 2.7A Tc

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

6.5A

JESD-609 Code :

e3

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes