FDD86540
- Mfr.Part #
- FDD86540
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 21.5A/50A DPAK
- Stock
- 128,447
- In Stock :
- 128,447
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 127W
- Length :
- 6.73mm
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Turn-Off Delay Time :
- 31 ns
- Published :
- 2010
- Fall Time (Typ) :
- 6.9 ns
- Number of Pins :
- 3
- Turn On Delay Time :
- 26 ns
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 228 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 4.1m Ω @ 21.5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 21.5A Ta 50A Tc
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 21.5A
- Height :
- 2.39mm
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 60V
- Number of Terminations :
- 2
- Width :
- 6.22mm
- Drain Current-Max (Abs) (ID) :
- 50A
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 3.1W Ta 127W Tc
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6340pF @ 30V
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Weight :
- 260.37mg
- Series :
- PowerTrench®
- Rise Time :
- 15ns
- Transistor Application :
- SWITCHING
- Datasheets
- FDD86540

N-Channel Tape & Reel (TR) 4.1m Ω @ 21.5A, 10V ±20V 6340pF @ 30V 90nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86540 Description
FDD86540 is a 60V N-Channel PowerTrench? MOSFET. The N-Channel MOSFET FDD86540 has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDD86540 Features
-
Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
-
Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
-
100% UIL tested
-
RoHS Compliant
-
Power Dissipation: 127W
FDD86540 Applications
-
Primary Switch in isolated DC-DC
-
Synchronous Rectifier
-
USB Type C High-end Smartphones & Tablet PCs
-
Point-of-Load Power Distribution in 5 V, 12 V, 15 V, and 20 V systems
-
Enterprise Computing and Telecom Equipment
-
Multifunction Printers
-
Fan Motor Drives
-
Enterprise Copiers
-
Set-top Boxes
-
General-purpose, High-voltage Power-Rail Switching
-
PCIe/PCI Adapter Cards
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