FDD86381-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Power Dissipation-Max :

48.4W Tj

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Drain to Source Voltage (Vdss) :

80V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

80V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

866pF @ 40V

Avalanche Energy Rating (Eas) :

14 mJ

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Series :

Automotive, AEC-Q101, PowerTrench®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

21m Ω @ 25A, 10V

Continuous Drain Current (ID) :

25A

JESD-609 Code :

e3

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Weight :

260.37mg

Drain-source On Resistance-Max :

0.021Ohm

Terminal Finish :

Tin (Sn)