FDD86367-F085
- Mfr.Part #
- FDD86367-F085
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 100A DPAK
- Stock
- 77,173
- In Stock :
- 77,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 260.37mg
- Max Junction Temperature (Tj) :
- 175°C
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 36 ns
- Continuous Drain Current (ID) :
- 100A
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Height :
- 2.517mm
- Number of Channels :
- 1
- Factory Lead Time :
- 47 Weeks
- Power Dissipation-Max :
- 227W Tj
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Drain to Source Breakdown Voltage :
- 80V
- Power Dissipation :
- 227W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 88nC @ 10V
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4840pF @ 40V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 20 ns
- Datasheets
- FDD86367-F085

N-Channel Tape & Reel (TR) 4.2m Ω @ 80A, 10V ±20V 4840pF @ 40V 88nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86367-F085 Overview
The maximum input capacitance of this device is 4840pF @ 40V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100A.When VGS=80V, and ID flows to VDS at 80VVDS, the drain-source breakdown voltage is 80V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 36 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FDD86367-F085 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 36 ns
FDD86367-F085 Applications
There are a lot of ON Semiconductor
FDD86367-F085 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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