FDD86326
- Mfr.Part #
- FDD86326
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 8A/37A DPAK
- Stock
- 3,675
- In Stock :
- 3,675
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 2.9 ns
- Drain Current-Max (Abs) (ID) :
- 8A
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Weight :
- 260.37mg
- Continuous Drain Current (ID) :
- 42A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1035pF @ 50V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 6.73mm
- Nominal Vgs :
- 3.1 V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Pulsed Drain Current-Max (IDM) :
- 40A
- Published :
- 2010
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 7.6 ns
- Rise Time :
- 3ns
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 8A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta 37A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Height :
- 2.39mm
- Power Dissipation :
- 62W
- Width :
- 6.22mm
- Turn-Off Delay Time :
- 13.4 ns
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max :
- 3.1W Ta 62W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 80V
- Threshold Voltage :
- 3.1V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Datasheets
- FDD86326
FDD86326 Documents

N-Channel Tape & Reel (TR) 23m Ω @ 8A, 10V ±20V 1035pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86326 is a type of N-Channel MOSFET. This N-Channel MOSFET is produced using an advanced Power Trench process that has been optimized for DS, switching performance and ruggedness. It has the following characteristics: Shielded Gate MOSFET Technology, High performance trench technology for extremely low DS(on), Fast switching speed.
FDD86326 Features
Shielded Gate MOSFET Technology
High performance trench technology for extremely low DS(on)
Fast switching speed
100% UIL tested
RoHS Compliant
FDD86326 Applications
DC- DC Conversion
DS
Switching
Ruggedness
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