FDD86326

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Mfr.Part #
FDD86326
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 80V 8A/37A DPAK
Stock
3,675
In Stock :
3,675

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
2.9 ns
Drain Current-Max (Abs) (ID) :
8A
Mounting Type :
Surface Mount
Number of Terminations :
2
Weight :
260.37mg
Continuous Drain Current (ID) :
42A
Input Capacitance (Ciss) (Max) @ Vds :
1035pF @ 50V
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Length :
6.73mm
Nominal Vgs :
3.1 V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PowerTrench®
Pulsed Drain Current-Max (IDM) :
40A
Published :
2010
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
Case Connection :
DRAIN
Element Configuration :
Single
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn On Delay Time :
7.6 ns
Rise Time :
3ns
Rds On (Max) @ Id, Vgs :
23m Ω @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C :
8A Ta 37A Tc
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Height :
2.39mm
Power Dissipation :
62W
Width :
6.22mm
Turn-Off Delay Time :
13.4 ns
Factory Lead Time :
8 Weeks
Power Dissipation-Max :
3.1W Ta 62W Tc
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
REACH SVHC :
No SVHC
Pbfree Code :
yes
Terminal Form :
Gull wing
Radiation Hardening :
No
Transistor Application :
SWITCHING
Number of Pins :
3
Drain to Source Breakdown Voltage :
80V
Threshold Voltage :
3.1V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD86326 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, FDD86326 pinout, FDD86326 datasheet PDF, FDD86326 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD86326 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD86326


N-Channel Tape & Reel (TR) 23m Ω @ 8A, 10V ±20V 1035pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD86326 Description


FDD86326 is a type of N-Channel MOSFET. This N-Channel MOSFET is produced using an advanced Power Trench process that has been optimized for DS, switching performance and ruggedness. It has the following characteristics: Shielded Gate MOSFET Technology, High performance trench technology for extremely low DS(on), Fast switching speed.


FDD86326 Features


Shielded Gate MOSFET Technology
High performance trench technology for extremely low DS(on)
Fast switching speed
100% UIL tested
RoHS Compliant


FDD86326 Applications

DC- DC Conversion
DS
Switching
Ruggedness
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