FDD86326

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Power Dissipation :

62W

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

8A Ta 37A Tc

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation-Max :

3.1W Ta 62W Tc

ECCN Code :

EAR99

Element Configuration :

Single

Drain to Source Breakdown Voltage :

80V

Published :

2010

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

42A

Height :

2.39mm

Case Connection :

DRAIN

Turn On Delay Time :

7.6 ns

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

23m Ω @ 8A, 10V

Width :

6.22mm

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

1035pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

2.9 ns

Rise Time :

3ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Nominal Vgs :

3.1 V

Weight :

260.37mg

Turn-Off Delay Time :

13.4 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drain Current-Max (Abs) (ID) :

8A

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

3.1V

Pulsed Drain Current-Max (IDM) :

40A