FDD86252

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Threshold Voltage :

3.1V

Weight :

260.37mg

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Series :

PowerTrench®

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

72 mJ

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

5A

Turn On Delay Time :

8.3 ns

Mounting Type :

Surface Mount

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.1W Ta 89W Tc

Rise Time :

1.8ns

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Height :

2.39mm

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Fall Time (Typ) :

3 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Continuous Drain Current (ID) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Radiation Hardening :

No

Width :

6.22mm

Current - Continuous Drain (Id) @ 25°C :

5A Ta 27A Tc

Mount :

Surface Mount

Element Configuration :

Single

Packaging :

Cut Tape (CT)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

ECCN Code :

EAR99

Power Dissipation :

3.1W

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Number of Pins :

3

Drain to Source Breakdown Voltage :

150V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

14 ns

Rds On (Max) @ Id, Vgs :

52m Ω @ 5A, 10V

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.052Ohm

Factory Lead Time :

8 Weeks

Length :

6.73mm

Input Capacitance (Ciss) (Max) @ Vds :

985pF @ 75V