FDD86252
- Mfr.Part #
- FDD86252
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 5A/27A DPAK
- Stock
- 14,101
- In Stock :
- 14,101
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2011
- JESD-30 Code :
- R-PSSO-G2
- Weight :
- 260.37mg
- Continuous Drain Current (ID) :
- 5A
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta 27A Tc
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Mounting Type :
- Surface Mount
- Height :
- 2.39mm
- Power Dissipation-Max :
- 3.1W Ta 89W Tc
- Drain Current-Max (Abs) (ID) :
- 5A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 3 ns
- Rise Time :
- 1.8ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 150V
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Threshold Voltage :
- 3.1V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 14 ns
- Drain-source On Resistance-Max :
- 0.052Ohm
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 3
- Power Dissipation :
- 3.1W
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 985pF @ 75V
- Element Configuration :
- Single
- Turn On Delay Time :
- 8.3 ns
- Length :
- 6.73mm
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Width :
- 6.22mm
- Datasheets
- FDD86252

N-Channel Cut Tape (CT) 52m Ω @ 5A, 10V ±20V 985pF @ 75V 16nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86252 Description
The FDD86252 is an N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDD86252 has been specially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD86252 is in the DPAK-3 package with 3.1W power dissipation.
FDD86252 Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 52 m? at VGS = 10 V, ID = 5 A
-
Max rDS(on) = 72 m? at VGS = 6 V, ID = 4 A
-
100% UIL tested
-
RoHS Compliant
FDD86252 Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
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