FDD86250

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.1W

Width :

6.22mm

Pbfree Code :

yes

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

8A Ta 50A Tc

Power Dissipation-Max :

3.1W Ta 132W Tc

Vgs (Max) :

±20V

Rise Time :

3.7ns

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

8A

Turn-Off Delay Time :

20 ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Resistance :

45mOhm

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

150V

Length :

6.73mm

Pulsed Drain Current-Max (IDM) :

40A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Continuous Drain Current (ID) :

8A

Number of Terminations :

2

Number of Channels :

1

REACH SVHC :

No SVHC

Turn On Delay Time :

11.2 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2110pF @ 75V

Published :

2017

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Mounting Type :

Surface Mount

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

22m Ω @ 8A, 10V

Radiation Hardening :

No

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Weight :

260.37mg

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Elements :

1

Threshold Voltage :

2.9V

Height :

2.517mm

Fall Time (Typ) :

4 ns

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Contact Plating :

Tin

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)