FDD86113LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

5.5A

Width :

6.22mm

Pbfree Code :

yes

Lead Free :

Lead Free

Power Dissipation-Max :

3.1W Ta 29W Tc

Rds On (Max) @ Id, Vgs :

104m Ω @ 4.2A, 10V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4.2A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.73mm

Weight :

260.37mg

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Height :

2.39mm

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 5.5A Tc

Number of Terminations :

2

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

3.6 ns

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

9.7 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

285pF @ 50V

Number of Pins :

3

Terminal Form :

Gull wing

Fall Time (Typ) :

1.6 ns

Power Dissipation :

3.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Rise Time :

1.3ns