FDD86110

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

10.2m Ω @ 12.5A, 10V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

3.9 ns

Power Dissipation-Max :

3.1W Ta 127W Tc

Power Dissipation :

3.1W

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

12 ns

REACH SVHC :

No SVHC

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta 50A Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Weight :

260.37mg

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Series :

PowerTrench®

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

50A

Rise Time :

5.4ns

Turn-Off Delay Time :

19 ns

Threshold Voltage :

2.8V

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

100V

Terminal Form :

Gull wing

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

2265pF @ 50V

Nominal Vgs :

2.8 V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Pins :

3

Mount :

Surface Mount

Length :

6.73mm

JESD-30 Code :

R-PSSO-G2

Height :

2.39mm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Continuous Drain Current (ID) :

12.5A

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

60A