FDD86102LZ

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Mfr.Part #
FDD86102LZ
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 8A/35A DPAK
Stock
185,283
In Stock :
185,283

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
22.5m Ω @ 8A, 10V
Length :
6.73mm
Series :
PowerTrench®
Drain to Source Breakdown Voltage :
100V
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Power Dissipation-Max :
3.1W Ta 54W Tc
Published :
2006
Gate to Source Voltage (Vgs) :
20V
Rise Time :
2.3ns
Drain Current-Max (Abs) (ID) :
8A
Nominal Vgs :
1.5 V
Radiation Hardening :
No
Vgs (Max) :
±20V
Number of Pins :
3
ECCN Code :
EAR99
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
84 mJ
Continuous Drain Current (ID) :
8A
Fall Time (Typ) :
2.3 ns
Current - Continuous Drain (Id) @ 25°C :
8A Ta 35A Tc
Transistor Element Material :
SILICON
Turn On Delay Time :
6.6 ns
Power Dissipation :
54W
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Pulsed Drain Current-Max (IDM) :
40A
Operating Temperature :
-55°C~150°C TJ
Weight :
260.37mg
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
6.22mm
Mounting Type :
Surface Mount
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.0225Ohm
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Turn-Off Delay Time :
20 ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Factory Lead Time :
8 Weeks
Terminal Finish :
Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
1540pF @ 50V
Number of Terminations :
2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Terminal Form :
Gull wing
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Threshold Voltage :
1.5V
Height :
2.39mm
Datasheets
FDD86102LZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD86102LZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD86102LZ pinout, FDD86102LZ datasheet PDF, FDD86102LZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD86102LZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD86102LZ


N-Channel Tape & Reel (TR) 22.5m Ω @ 8A, 10V ±20V 1540pF @ 50V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD86102LZ Description

The FDD86102LZ is a N-channel MOSFET produced using advanced PowerTrench? process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level. This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench@ process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

FDD86102LZ Features

Very low Qg and Qgd compared to competing Trench technologies
Fast switching speed
100% UIL tested
6kV typical HBM ESD protection level
FDD86102LZ Applications

DC - DC Conversion
Inverter
Synchronous Rectifier
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