FDD86102LZ
- Mfr.Part #
- FDD86102LZ
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 8A/35A DPAK
- Stock
- 185,283
- In Stock :
- 185,283
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 22.5m Ω @ 8A, 10V
- Length :
- 6.73mm
- Series :
- PowerTrench®
- Drain to Source Breakdown Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 3.1W Ta 54W Tc
- Published :
- 2006
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 2.3ns
- Drain Current-Max (Abs) (ID) :
- 8A
- Nominal Vgs :
- 1.5 V
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 84 mJ
- Continuous Drain Current (ID) :
- 8A
- Fall Time (Typ) :
- 2.3 ns
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta 35A Tc
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 6.6 ns
- Power Dissipation :
- 54W
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 40A
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 260.37mg
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0225Ohm
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 20 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1540pF @ 50V
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Threshold Voltage :
- 1.5V
- Height :
- 2.39mm
- Datasheets
- FDD86102LZ

N-Channel Tape & Reel (TR) 22.5m Ω @ 8A, 10V ±20V 1540pF @ 50V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
The FDD86102LZ is a N-channel MOSFET produced using advanced PowerTrench? process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level. This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench@ process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
FDD86102LZ Features
Very low Qg and Qgd compared to competing Trench technologies
Fast switching speed
100% UIL tested
6kV typical HBM ESD protection level
FDD86102LZ Applications
DC - DC Conversion
Inverter
Synchronous Rectifier
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