FDD8586

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0055Ohm

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

77W Tc

Case Connection :

DRAIN

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

35A

Qualification Status :

COMMERCIAL

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerTrench®

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Pulsed Drain Current-Max (IDM) :

354A

DS Breakdown Voltage-Min :

20V

Avalanche Energy Rating (Eas) :

144 mJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 35A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.48pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)