FDD8580
- Mfr.Part #
- FDD8580
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 35A DPAK
- Stock
- 1,229
- In Stock :
- 1,229
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 49.5W Tc
- Supplier Device Package :
- D-PAK (TO-252AA)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 35A, 10V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1445pF @ 10V
- Datasheets
- FDD8580

N-Channel Tape & Reel (TR) 9mOhm @ 35A, 10V ±20V 1445pF @ 10V 27nC @ 10V 20V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8580 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), and fast switching speed.
FDD8580 Features
Max rDS(on) = 9m|? at VGS = 10V, ID = 35A
Max rDS(on) =13m|? at VGS = 4.5V, ID = 33A
Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V
Low gate resistance
100% Avalanche tested
RoHS compliant
FDD8580 Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
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