FDD850N10LD

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.096Ohm

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

42W Tc

Current - Continuous Drain (Id) @ 25°C :

15.3A Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pulsed Drain Current-Max (IDM) :

46A

FET Type :

N-Channel

Number of Elements :

1

JESD-30 Code :

R-PSSO-G4

Published :

2013

Number of Terminations :

4

Drain to Source Breakdown Voltage :

100V

Length :

6.73mm

Avalanche Energy Rating (Eas) :

41 mJ

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

Vgs (Max) :

±20V

Mount :

Surface Mount

Radiation Hardening :

No

Weight :

260.37mg

Height :

2.39mm

Terminal Form :

Gull wing

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1465pF @ 25V

Transistor Application :

SWITCHING

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

28.9nC @ 10V

Mounting Type :

Surface Mount

Turn On Delay Time :

17 ns

Number of Pins :

3

Continuous Drain Current (ID) :

15.3A

Rise Time :

21ns

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

75m Ω @ 12A, 10V

Turn-Off Delay Time :

27 ns

Element Configuration :

Single