FDD850N10LD

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.73mm

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1465pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

15.3A Tc

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

41 mJ

Published :

2013

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Continuous Drain Current (ID) :

15.3A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Pins :

3

Power Dissipation-Max :

42W Tc

Pulsed Drain Current-Max (IDM) :

46A

Rds On (Max) @ Id, Vgs :

75m Ω @ 12A, 10V

Fall Time (Typ) :

8 ns

Width :

6.22mm

Operating Mode :

ENHANCEMENT MODE

Weight :

260.37mg

Pbfree Code :

yes

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

ECCN Code :

EAR99

Number of Elements :

1

HTS Code :

8541.29.00.95

Turn-Off Delay Time :

27 ns

Number of Terminations :

4

Turn On Delay Time :

17 ns

Series :

PowerTrench®

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

28.9nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G4

Element Configuration :

Single

Case Connection :

DRAIN

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.096Ohm

Rise Time :

21ns