FDD850N10L

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Mfr.Part #
FDD850N10L
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Stock
4,950
In Stock :
4,950

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
1465pF @ 25V
Drain to Source Breakdown Voltage :
100V
Number of Pins :
3
Turn On Delay Time :
17 ns
Rds On (Max) @ Id, Vgs :
75m Ω @ 12A, 10V
JESD-609 Code :
e3
JEDEC-95 Code :
TO-252AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
15.7A
Length :
6.73mm
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Number of Terminations :
2
Published :
2010
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Current - Continuous Drain (Id) @ 25°C :
15.7A Tc
Transistor Element Material :
SILICON
Power Dissipation :
50W
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
28.9nC @ 10V
Vgs (Max) :
±20V
Weight :
260.37mg
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
FET Type :
N-Channel
Fall Time (Typ) :
8 ns
Turn-Off Delay Time :
27 ns
Operating Temperature :
-55°C~175°C TJ
Mount :
Surface Mount
Radiation Hardening :
No
Rise Time :
21ns
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
Series :
PowerTrench®
Number of Elements :
1
Drain-source On Resistance-Max :
0.096Ohm
Power Dissipation-Max :
50W Tc
Width :
6.22mm
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Height :
2.39mm
Datasheets
FDD850N10L
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD850N10L from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD850N10L pinout, FDD850N10L datasheet PDF, FDD850N10L amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD850N10L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDD850N10L


N-Channel Tape & Reel (TR) 75m Ω @ 12A, 10V ±20V 1465pF @ 25V 28.9nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD850N10L Description


ON Semiconductor's FDD850N10L N-Channel MOSFET is made with a PowerTrench? process that has been optimized to reduce on-state resistance while preserving exceptional switching performance. It's a TO-252-5 SMD (SMT) transistor with an N-Channel MOSFET. 100V drain-source breakdown voltage, 15.3A (Tc) continuous drain current at 25°C, and 2.5V @ 250A gate-source threshold voltage are among the features. The operating temperature range for FDD850N10L is -55°C to 150°C (TJ).



FDD850N10L Features


  • Fast Switching

  • RoHS Compliant

  • Low Crss ( Typ. 42pF)

  • 100% Avalanche Tested

  • Improve dv/dt Capability

  • Low Gate Charge ( Typ. 22.2nC)

  • RDS(on) = 61m? ( Typ.) @ VGS = 10V, ID = 12A

  • RDS(on) = 64m? ( Typ.) @ VGS = 5V, ID = 12A



FDD850N10L Applications


  • LED TV

  • DC-DC converters

  • Consumer Appliances

  • Synchronous Rectification


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