FDD850N10L
- Mfr.Part #
- FDD850N10L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 4,950
- In Stock :
- 4,950
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1465pF @ 25V
- Drain to Source Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Turn On Delay Time :
- 17 ns
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 12A, 10V
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-252AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 15.7A
- Length :
- 6.73mm
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Terminations :
- 2
- Published :
- 2010
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 15.7A Tc
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 50W
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 28.9nC @ 10V
- Vgs (Max) :
- ±20V
- Weight :
- 260.37mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 8 ns
- Turn-Off Delay Time :
- 27 ns
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Rise Time :
- 21ns
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- Series :
- PowerTrench®
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.096Ohm
- Power Dissipation-Max :
- 50W Tc
- Width :
- 6.22mm
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.39mm
- Datasheets
- FDD850N10L

N-Channel Tape & Reel (TR) 75m Ω @ 12A, 10V ±20V 1465pF @ 25V 28.9nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD850N10L Description
ON Semiconductor's FDD850N10L N-Channel MOSFET is made with a PowerTrench? process that has been optimized to reduce on-state resistance while preserving exceptional switching performance. It's a TO-252-5 SMD (SMT) transistor with an N-Channel MOSFET. 100V drain-source breakdown voltage, 15.3A (Tc) continuous drain current at 25°C, and 2.5V @ 250A gate-source threshold voltage are among the features. The operating temperature range for FDD850N10L is -55°C to 150°C (TJ).
FDD850N10L Features
-
Fast Switching
-
RoHS Compliant
-
Low Crss ( Typ. 42pF)
-
100% Avalanche Tested
-
Improve dv/dt Capability
-
Low Gate Charge ( Typ. 22.2nC)
-
RDS(on) = 61m? ( Typ.) @ VGS = 10V, ID = 12A
-
RDS(on) = 64m? ( Typ.) @ VGS = 5V, ID = 12A
FDD850N10L Applications
-
LED TV
-
DC-DC converters
-
Consumer Appliances
-
Synchronous Rectification
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