FDD850N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rise Time :

21ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Length :

6.73mm

Continuous Drain Current (ID) :

15.7A

Gate Charge (Qg) (Max) @ Vgs :

28.9nC @ 10V

Weight :

260.37mg

Radiation Hardening :

No

Fall Time (Typ) :

8 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Series :

PowerTrench®

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Terminal Form :

Gull wing

Height :

2.39mm

Turn On Delay Time :

17 ns

Power Dissipation :

50W

Input Capacitance (Ciss) (Max) @ Vds :

1465pF @ 25V

Number of Pins :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15.7A Tc

Drain-source On Resistance-Max :

0.096Ohm

Mounting Type :

Surface Mount

Number of Elements :

1

Turn-Off Delay Time :

27 ns

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Power Dissipation-Max :

50W Tc

Rds On (Max) @ Id, Vgs :

75m Ω @ 12A, 10V

ECCN Code :

EAR99

Width :

6.22mm

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-252AA