FDD068AN03L

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Mfr.Part #
FDD068AN03L
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 17A/35A TO252AA
Stock
48,216
In Stock :
48,216

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
5.7m Ω @ 35A, 10V
Terminal Form :
Gull wing
DS Breakdown Voltage-Min :
30V
Power Dissipation-Max :
80W Tc
Current - Continuous Drain (Id) @ 25°C :
17A Ta 35A Tc
Pbfree Code :
yes
Surface Mount :
yes
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
30V
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.0068Ohm
JESD-30 Code :
R-PSSO-G2
Transistor Element Material :
SILICON
Series :
PowerTrench®
Transistor Application :
SWITCHING
Number of Elements :
1
Qualification Status :
COMMERCIAL
Reach Compliance Code :
Unknown
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
2.525pF @ 15V
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Avalanche Energy Rating (Eas) :
168 mJ
Pin Count :
3
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Drain Current-Max (Abs) (ID) :
17A
Terminal Finish :
MATTE TIN
Number of Terminations :
2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
FDD068AN03L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD068AN03L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, FDD068AN03L pinout, FDD068AN03L datasheet PDF, FDD068AN03L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD068AN03L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD068AN03L


N-Channel Tape & Reel (TR) 5.7m Ω @ 35A, 10V ±20V 2.525pF @ 15V 60nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD068AN03L Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 168 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2.525pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [17A] according to its drain current.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

FDD068AN03L Features


the avalanche energy rating (Eas) is 168 mJ
a 30V drain to source voltage (Vdss)


FDD068AN03L Applications


There are a lot of Rochester Electronics, LLC
FDD068AN03L applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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